High temperature operation of a monolithic bidirectional diamond switch

We report the 250 °C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with 400 nm p-type channel boron doping [NA-ND] = 2.3 × 1017 cm?3 and an Al2O3 oxide thickness 50 nm. The Ist IIIrd quadrants transistor characteristics are successfully measured by controlling conductivity both gates separately, clear ON OFF state. threshold voltage around 35 V is obtained low minimum leakage current 1.00 10?4 mA/mm at gate-source bias VGS V. switch then operating in quadrant each setup. This first proof concept offers reverse conducting blocking diamond MOSFET, only one drift region layer.